fqb34p10 tm_f085 100v p-channel mosfet fqb34p10 tm_f085 100v p-channel mosfet general description these p-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. features ? -33.5a, -100v, r ds(on) = 0.06 ? @v gs = -10 v ? low gate charge ( typical 85 nc) ? low crss ( typical 170 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating ! !! ! ! !! ! ! !! ! " "" " # ## # ! !! ! ! !! ! ! !! ! ! !! ! ! !! ! ! !! ! " "" " # ## # ! !! ! ! !! ! ! !! ! s d g absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics * when mounted on the minimum pad size recommended (pcb mount) symbol parameter fqb34p10 tm_f085 units v dss drain-source voltage -100 v i d drain current - continuous (t c = 25c) -33.5 a - continuous (t c = 100c) -23.5 a i dm drain current - pulsed (note 1) -134 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 2200 mj i ar avalanche current (note 1) -33.5 a e ar repetitive avalanche energy (note 1) 15.5 mj dv/dt peak diode recovery dv/dt (note 3) -6.0 v/ns p d power dissipation (t a = 25c) * 3.75 w power dissipation (t c = 25c) 155 w - derate above 25c 1.03 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 0.97 c / w r ja thermal resistance, junction-to-ambient * -- 40 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w d 2 -pak fqb series gs d march 2012 qfet tm ? 2 01 2 fairchil d s e micond uctor cor pora t io n f qb34p10tm_ f085 rev. c1 www.fairchil dsemi.c o m 1 ? qualified to aec q101 ? r ohs c ompliant
fqb34p10 tm_f085 100v p-channel mosfet electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l =3.9mh, i as = -33.5a, v dd = -25v, r g = 25 ?, starting t j = 25c 3. i sd -33.5a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -100 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.1 -- v/c i dss zero gate voltage drain current v ds = -100 v, v gs = 0 v -- -- -1 a v ds = -80 v, t c = 150c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -16.75 a -- 0.049 0.06 ? g fs forward transconductance v ds = -40 v, i d = -16.75 a (note 4) -- 23 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 2240 2910 pf c oss output capacitance -- 730 950 pf c rss reverse transfer capacitance -- 170 220 pf switching characteristics t d(on) turn-on delay time v dd = -50 v, i d = -33.5 a, r g = 25 ? (note 4, 5) -- 25 60 ns t r turn-on rise time -- 250 510 ns t d(off) turn-off delay time -- 160 330 ns t f turn-off fall time -- 210 430 ns q g total gate charge v ds = -80 v, i d = -33.5 a, v gs = -10 v (note 4, 5) -- 85 110 nc q gs gate-source charge -- 15 -- nc q gd gate-drain charge -- 45 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -33.5 a i sm maximum pulsed drain-source diode forward current -- -- -134 a v sd drain-source diode forward voltage v gs = 0 v, i s = -33.5 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -33.5 a, di f / dt = 100 a/ s (note 4) -- 160 -- ns q rr reverse recovery charge -- 0.88 -- c f qb34p10tm _f085 rev. c1 www.fairchildsemi.com 2
fqb34p10 tm_f085 100v p-channel mosfet typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 10 2 v gs top : -15.0 v -10.0 v -8.0 v -7.0 v -6.5 v -5.5 v -5.0 v bottom : -4.5 v note : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] 0 25 50 75 100 125 150 175 200 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 20406080100 0 2 4 6 8 10 12 v ds = -50v v ds = -20v v ds = -80v note : i d = -33.5 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 246810 10 -1 10 0 10 1 10 2 175 25 -55 notes : 1. v ds = -40v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics f qb34p10tm _f085 rev. c1 www.fairchildsemi.com 3
fqb34p10 tm_f085 100v p-channel mosfet typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1. z jc (t) = 0.97 /w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 -i d , drain current [a] t c , case temperature [ ] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = -10 v 2. i d = -16.75 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature f qb34p10tm _f085 rev. c1 www.fairchildsemi.com 4
charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d( off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d( off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms f qb34p10tm _f085 rev. c1 www.fairchildsemi.com 5
FQB34P10TM_f085 100v p-channel mosfet peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- f qb34p10tm _f085 rev. c1 www.fairchildsemi.com 6
fqb34p 10tm_f085 100v channel mosfet www.fairchildsemi.com 7 f qb34p10tm _f085 rev. c1
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fqb34p 10tm_f085 100v channel mosfet www.fairchildsemi.com f qb34p10tm _f085 rev. c1
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